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STN1NF20 数据表(PDF) 1 Page - STMicroelectronics |
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STN1NF20 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() November 2011 Doc ID 022321 Rev 1 1/12 12 STN1NF20 N-channel 200 V, 1.1 Ω, 1 A SOT-223 STripFET™ II Power MOSFET Features ■ 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability Applications ■ Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Figure 1. Internal schematic diagram Order code VDSS RDS(on) max ID STN1NF20 200 V < 1.5 Ω 1 A SOT-223 1 2 4 3 Table 1. Device summary Order code Marking Package Packaging STN1NF20 1NF20 SOT-223 Tape and reel www.st.com |
类似零件编号 - STN1NF20 |
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类似说明 - STN1NF20 |
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