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STN1NF20 数据表(PDF) 3 Page - STMicroelectronics |
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STN1NF20 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STN1NF20 Electrical ratings Doc ID 022321 Rev 1 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 20 V ID Drain current continuous Tamb = 25 °C 1 A ID Drain current continuous Tamb = 100 °C 1 A IDM (1) 1. Pulse width limited by safe operating area. Drain current pulsed 4 A PTOT Total dissipation at Tamb = 25 °C 2 W dv/dt (2) 2. Isd ≤1 A, di/dt ≤200 A/µs, VDD ≤80% V(BR)DSS. Peak diode recovery voltage slope 10 V/ns Tj Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-amb Thermal resistance junction to ambient 62.50 °C/W Table 4. Thermal data Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive(1) 1. Pulse width limited by TJMAX. 1A EAS Single pulse avalanche energy (2) 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. 70 mJ |
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