STN1NF20 datasheet(5/12 Pages) STMICROELECTRONICS

5 / 12 page

STN1NF20

Electrical characteristics

Doc ID 022321 Rev 1

5/12

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(v)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

VDD = 100 V, ID = 0.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13)

5.6

12.4

15.8

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current

(pulsed)

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 1 A, VGS = 0

1.6

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 1 A, di/dt = 100 A/µs

VDD = 20 V

(see Figure 15)

51.8

90.7

3.5

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 1 A, di/dt = 100 A/µs

VDD = 20 V, Tj = 150 °C

(see Figure 15)

58.0

106.7

3.7

STN1NF20 数据表(PDF) 5 Page - STMicroelectronics

STN1NF20 数据表(HTML) 5 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载