STN1NF20 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STN1NF20

4/12

Doc ID 022321 Rev 1

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

200

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 200 V

VDS = 200 V, TC=125 °C

µA

IGSS

Gate-body leakage

current

VGS = ± 20 V, VDS=0

±100

VGS(th)

Gate threshold voltage VGS = VDS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 0.5 A

1.1

1.5

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

Instrinsic gate

resistance

f=1 MHz open drain

4.8

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 160 V, ID = 1 A,

VGS = 10 V

(see Figure 14)

5.7

1.1

3.0

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