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AT45DB080 数据表(PDF) 9 Page - ATMEL Corporation |
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AT45DB080 数据表(HTML) 9 Page - ATMEL Corporation |
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9 / 18 page ![]() AT45DB080 9 Write Operations The following block diagram and waveforms illustrate the various write sequences available. Main Memory Page Program through Buffers Buffer Write Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page) FLASH MEMORY ARRAY PAGE (264 BYTES) BUFFER 2 (264 BYTES) BUFFER 1 (264 BYTES) I/O INTERFACE I/O7-I/O0 (INPUT) BUFFER 1 TO MAIN MEMORY PAGE PROGRAM MAIN MEMORY PAGE PROGRAM THROUGH BUFFER 2 BUFFER 2 TO MAIN MEMORY PAGE PROGRAM MAIN MEMORY PAGE PROGRAM THROUGH BUFFER 1 BUFFER 1 WRITE BUFFER 2 WRITE I/O7-I/O0 (INPUT) CMD n n+1 Last Byte · Completes writing into selected buffer · Starts self-timed erase/program operation CS r r r, PA11-7 PA6-0, BFA8 BFA7-0 ADDR ADDR ADDR I/O7-I/O0 (INPUT) CMD X X···X, BFA8 BFA7-0 n n+1 Last Byte · Completes writing into selected buffer CS ADDR ADDR ADDR I/O7-I/O0 (INPUT) CMD PA6-0, X CS Starts self-timed erase/program operation r r r, PA11-7 X ADDR ADDR ADDR Each transition represents 8 bits and 1 clock cycle n = 1st byte written n+1 = 2nd byte written |
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