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HVLED807PF 数据表(PDF) 12 Page - STMicroelectronics |
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HVLED807PF 数据表(HTML) 12 Page - STMicroelectronics |
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12 / 36 page ![]() Electrical specifications HVLED807PF 12/36 Doc ID 023464 Rev 5 Figure 5. OFF-state drain and source current test circuit Note: The measured IDSS is the sum between the current across the startup resistor and the effective MOSFET’s OFF-state drain current. VCOMPH Upper COMP voltage VDMG = 2.3 V 2.7 V VCOMPL Lower COMP voltage VDMG = 2.7 V 0.7 V VCOMPBM Burst-mode threshold 1 V Hys Burst-mode hysteresis 65 mV Current reference VILEDx Maximum value VCOMP = VCOMPL 1.5 1.6 1.7 V VCLED Current reference voltage 0.192 0.2 0.208 V Current sense tLEB Leading-edge blanking (5) 330 ns TD Delay-to-output (H-L) 90 200 ns VCSx Max. clamp value (4) dVcs/dt = 200 mV/µs 0.7 0.75 0.8 V VCSdis Hiccup-mode OCP level (4) 0.92 1 1.08 V 1. VCC=14 V (unless otherwise specified). 2. Limits are production tested at Tj=Ta=25 °C, and are guaranteed by statistical characterization in the range Tj -25 to +125 °C. 3. Not production tested, guaranteed statistical characterization only. 4. Parameters tracking each other (in the same section). 5. Guaranteed by design. Table 5. Electrical characteristics(1) (2) (continued) Symbol Parameter Test condition Min. Typ. Max. Unit 2.5V COMP SOURCE DRAIN VDD + - CURRENT CONTROL ILED GND DMG CS Vin 750V A Idss 14V AM13211v1 |
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