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HVLED807PF 数据表(PDF) 19 Page - STMicroelectronics |
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HVLED807PF 数据表(HTML) 19 Page - STMicroelectronics |
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19 / 36 page ![]() HVLED807PF Device description Doc ID 023464 Rev 5 19/36 The triggering block is blanked after MOSFET's turn-off to prevent any negative-going edge that follows leakage inductance demagnetization from triggering the DMG circuit erroneously. This TBLANK blanking time is dependent on the voltage on COMP pin: it is TBLANK=30 µs for VCOMP=0.9 V, and decreases almost linearly down to TBLANK=6 µs for VCOMP=1.3 V. The voltage on the pin is both top and bottom limited by a double clamp, as illustrated in the internal diagram of the DMG block of Figure 14. The upper clamp is typically located at 3.3 V, while the lower clamp is located at -60 mV. The interface between the pin and the auxiliary winding will be a resistor divider. Its resistance ratio as well as the individual resistance values will be properly chosen (see Section 4.6, 4.7 and 4.11). Please note that the maximum IDMG sunk/sourced current has to not exceed ±2 mA (AMR) in all the Vin range conditions. No capacitor is allowed between DMG pin and the auxiliary transformer. The switching frequency is top-limited below 166 kHz, as the converter's operating frequency tends to increase excessively at light load and high input voltage. A Starter block is also used to start-up the system, that is, to turn on the MOSFET during converter power-up, when no or a too small signal is available on the DMG pin. The starter frequency is 2 kHz if COMP pin is below burst mode threshold, i.e. 1 V, while it becomes 8 kHz if this voltage exceed this value. After the first few cycles initiated by the starter, as the voltage developed across the auxiliary winding becomes large enough to arm the DMG circuit, MOSFET's turn-on will start to be locked to transformer demagnetization, hence setting up QR operation. The starter is activated also when the IC is in Constant Current regulation and the output voltage is not high enough to allow the DMG triggering. If the demagnetization completes - hence a negative-going edge appears on the DMG pin - after a time exceeding time TBLANK from the previous turn-on, the MOSFET will be turned on again, with some delay to ensure minimum voltage at turn-on. If, instead, the negative- going edge appears before TBLANK has elapsed, it will be ignored and only the first negative- going edge after TBLANK will turn-on the MOSFET. In this way one or more drain ringing cycles will be skipped ("valley-skipping mode", Figure 15) and the switching frequency will be prevented from exceeding 1/TBLANK. Figure 15. Drain ringing cycle skipping as the load is progressively reduced Note: That when the system operates in valley skipping-mode, uneven switching cycles may be observed under some line/load conditions, due to the fact that the OFF-time of the MOSFET is allowed to change with discrete steps of one ringing cycle, while the OFF-time needed for cycle-by-cycle energy balance may fall in between. Thus one or more longer switching cycles will be compensated by one or more shorter cycles and vice versa. However, this mechanism is absolutely normal and there is no appreciable effect on the performance of the converter or on its output voltage. AM13565v1 Pin = Pin'' < Pin' Pin = Pin''' < Pin'' VDS TFW TON VDS VDS TOSC TOSC TOSC Pin = Pin' (limit condition) TW t t t |
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