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HVLED807PF 数据表(PDF) 16 Page - STMicroelectronics

部件名 HVLED807PF
功能描述  Offline LED driver with primary-sensing and high power factor up to 7 W
PDF  36 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

HVLED807PF 数据表(HTML) 16 Page - STMicroelectronics

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Device description
HVLED807PF
16/36
Doc ID 023464 Rev 5
1.
QR mode at heavy load. Quasi-resonant operation lies in synchronizing MOSFET's
turn-on to the transformer's demagnetization by detecting the resulting negative-going
edge of the voltage across any winding of the transformer. Then the system works
close to the boundary between discontinuous (DCM) and continuous conduction
(CCM) of the transformer. As a result, the switching frequency is different for different
line/load conditions (see the hyperbolic-like portion of the curves in
Figure 11).
Minimum turn-on losses, low EMI emission and safe behavior in short circuit are the
main benefits of this kind of operation.
2.
Valley-skipping mode at medium/ light load. Depending on voltage on COMP pin, the
device defines the maximum operating frequency of the converter. As the load is
reduced MOSFET's turn-on does not occur any more on the first valley but on the
second one, the third one and so on. In this way the switching frequency is no longer
increased (piecewise linear portion in
Figure 11).
3.
Burst-mode with no or very light load. When the load is extremely light or disconnected,
the converter enters a controlled on/off operation with constant peak current.
Decreasing the load result in frequency reduction, which can go down even to few
hundred hertz, thus minimizing all frequency-related losses and making it easier to
comply with energy saving regulations or recommendations. Being the peak current
very low, no issue of audible noise arises.
Figure 11.
Multi-mode operation of HVLED807PF (constant voltage operation)
4.2
Power section and gate driver
The power section guarantees safe avalanche operation within the specified energy rating
as well as high dv/dt capability. The Power MOSFET has a VDSS of 800 V min. and a typical
RDS(on) of 11 Ω.
The internal gate driver of the power MOSFET is designed to supply a controlled gate
current during both turn-on and turn-off in order to minimize common mode EMI. Under
UVLO conditions an internal pull-down circuit holds the gate low in order to ensure that the
power MOSFET cannot be turned on accidentally.
AM13561v1
0
f
sw
Pinmax
Input voltage
Pin
fosc
Burst-mode
Valley-skipping
mode
Quasi-resonant mode



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