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CS5166 数据表(PDF) 12 Page - Cherry Semiconductor Corporation |
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CS5166 数据表(HTML) 12 Page - Cherry Semiconductor Corporation |
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12 / 22 page ![]() Figure 17 shows the relationship between the regulated output voltage VFB and the Power-Good signal. To prevent Power-Good from interrupting the CPU unnecessarily, the CS5166 has a built-in delay to prevent noise at the VFB pin from toggling Power-Good. The internal time delay is designed to take about 75µs for Power-Good to go low and 65µs for it to recover. This allows the Power-Good signal to be completely insensitive to out of regulation conditions that are present for a duration less than the built in delay (see Figure 18). It is therefore required that the output voltage attains an out of regulation or in regulation level for at least the built- in delay time duration before the Power-Good signal can change state. Figure 18: Power-Good is insensitive to out of regulation conditions that are present for a duration less than the built in delay. External Output Enable Circuit On/off control of the regulator can be implemented through the addition of two additional discrete compo- nents (see Figure 19). This circuit operates by pulling the Soft Start pin high, and the ISENSE pin low, emulating a cur- rent limit condition. Figure 19: Implementing shutdown with the CS5166. Selecting External Components The CS5166 buck regulator can be used with a wide range of external power components to optimize the cost and performance of a particular design. The following informa- tion can be used as general guidelines to assist in their selection. NFET Power Transistors Both logic level and standard FETs can be used. The refer- ence designs derive gate drive from the 12V supply which is generally available in most computer systems and utilize logic level FETs. A charge pump may be easily implement- ed to support 5V only systems. Multiple FET’s may be par- alleled to reduce losses and improve efficiency and thermal management. Voltage applied to the FET gates depends on the applica- tion circuit used. Both upper and lower gate driver outputs are specified to drive to within 1.5V of ground when in the low state and to within 2V of their respective bias supplies when in the high state. In practice, the FET gates will be driven rail to rail due to overshoot caused by the capacitive load they present to the controller IC. For the typical appli- cation where VCC = 12V and 5V is used as the source for the regulator output current, the following gate drive is provided: VGS (TOP) = 12V - 5V = 7V, VGS(BOTTOM) = 12V, (see Figure 20). Figure 20: Gate drive waveforms depicting rail to rail swing. Trace 3 = GATE(H) (10V/div.) Trace 1= GATE(H) - 5VIN Trace 4 = GATE(L) (10V/div.) Trace 2 = Inductor Switching Node (5V/div.) Shutdown Input 5V ISENSE CS5166 SS 5 8 IN4148 MMUN2111T1 (SOT-23) Trace 1 PWRGD (2V/div) Trace 4 VFB (1V/div) 12 Application Information: continued |
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