DMHC3025LSD

Document number: DS35821 Rev. 4 - 2

5 of 9

www.diodes.com

November 2013

© Diodes Incorporated

DMHC3025LSD

0.01

0.02

0.03

0.04

0.05

0.06

0

-50 -25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J



V

= 4.5V

I= 5A

GS

D

V=

V

I = 10A

GS

D

10

0.5

1.5

2.5

0

1.0

2.0

3.0

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J



I= 1mA

D

I = 250µA

D

0

0.3

0.6

0.9

1.2

1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

10

15

20

0

5

T= 25°C

A

T = -55°C

A

T= 85°C

A

T= 125°C

A

T = 150°C

A

0

5

10

15

20

25

30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

1,000

100

10

f = 1MHz

0

2

4

6

8

10

12

Q(nC)

Figure 11 Gate Charge

0

2

4

6

8

10

V

= 15V

I=

A

DS

D

7.8