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DMHC3025LSD 数据表(PDF) 3 Page - Diodes Incorporated |
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DMHC3025LSD 数据表(HTML) 3 Page - Diodes Incorporated |
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3 / 9 page  DMHC3025LSD Document number: DS35821 Rev. 4 - 2 3 of 9 www.diodes.com November 2013 © Diodes Incorporated DMHC3025LSD Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 0.5 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±1 μA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) 1 — 2 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) — 19 25 mΩ VGS = 10V, ID = 5A — 26 40 VGS = 4.5V, ID = 4A Forward Transfer Admittance |Yfs| — 4 — S VDS = 5V, ID = 5A Diode Forward Voltage VSD — 0.70 1.2 V VGS = 0V, IS = 1.7A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 590 — pF VDS = 15V, VGS = 0V, f = 1MHz Output Capacitance Coss — 122 — Reverse Transfer Capacitance Crss — 58 — Gate resistance Rg — 1.5 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 5.4 — nC VDS = 15V, ID = 7.8A Total Gate Charge (VGS = 10V) Qg — 11.7 — Gate-Source Charge Qgs — 1.8 — Gate-Drain Charge Qgd — 2.1 — Turn-On Delay Time tD(on) — 11.2 — ns VDD = 15V, VGS = 4.5V, RL = 2.4Ω, RG = 1Ω, Turn-On Rise Time tr — 15 — Turn-Off Delay Time tD(off) — 17.5 — Turn-Off Fall Time tf — 8.7 — Reverse Recovery Time trr — 18.3 — ns IF = 12A, di/dt = 500A/μs Reverse Recovery Charge Qrr — 12 — nC Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS — — -0.5 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS — — ±1 μA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) -1 — -2 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) — 43 50 mΩ VGS = -10V, ID = -5A — 68 80 VGS = -4.5V, ID = -4A Forward Transfer Admittance |Yfs| — 3.5 — S VDS = -5V, ID = -5A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -1.7A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 631 — pF VDS = -15V, VGS = 0V, f = 1MHz Output Capacitance Coss — 137 — pF Reverse Transfer Capacitance Crss — 70 — pF Gate resistance Rg — 10.8 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 5.5 — nC VDS = -15V, ID = -6A Total Gate Charge (VGS = 10V) Qg — 11.4 — nC Gate-Source Charge Qgs — 1.8 — nC Gate-Drain Charge Qgd — 2.4 — nC Turn-On Delay Time tD(on) — 7.5 — ns VDD = -15V, VGS = -10V, RG = 6Ω, ID = -1A Turn-On Rise Time tr — 4.9 — ns Turn-Off Delay Time tD(off) — 28.2 — ns Turn-Off Fall Time tf — 13.5 — ns Reverse Recovery Time trr — 15.1 — ns IF = 12A, di/dt = 500A/μs Reverse Recovery Charge Qrr — 15.3 — nC Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. |
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