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DMHC3025LSD 数据表(PDF) 2 Page - Diodes Incorporated

部件名 DMHC3025LSD
功能描述  30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
PDF  9 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

DMHC3025LSD 数据表(HTML) 2 Page - Diodes Incorporated

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DMHC3025LSD
Document number: DS35821 Rev. 4 - 2
2 of 9
www.diodes.com
November 2013
© Diodes Incorporated
DMHC3025LSD
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
PD
1.5
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
83
°C/W
t < 10s
50
Thermal Resistance, Junction to Case
RθJC
14.5
Operating and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Maximum Ratings N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25C
TA = +70C
ID
6.0
4.8
A
t < 10s
TA = +25C
TA = +70C
ID
7.8
6.1
A
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = +25C
TA = +70C
ID
4.6
3.6
A
t < 10s
TA = +25C
TA = +70C
ID
6.1
4.8
A
Maximum Continuous Body Diode Forward Current (Note 5)
IS
2.5
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
IDM
60
A
Maximum Ratings P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5) VGS = -10V
Steady
State
TA = +25C
TA = +70C
ID
-4.2
-3.3
A
t < 10s
TA = +25C
TA = +70C
ID
-5.4
-4.3
A
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
TA = +25C
TA = +70C
ID
-3.2
-2.5
A
t < 10s
TA = +25C
TA = +70C
ID
-4.3
-3.3
A
Maximum Continuous Body Diode Forward Current (Note 5)
IS
-2.5
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
IDM
-30
A
Note:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.



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