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STL35N6F3 数据表(PDF) 6 Page - STMicroelectronics |
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STL35N6F3 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 17 page ![]() Electrical characteristics STL35N6F3 6/17 Doc ID 16557 Rev 4 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized VDS vs temperature Figure 7. Static drain-source on-resistance ID 100 10 1 0.1 0.1 1 VDS(V) 10 (A) Oper ation in thi s a rea is Limited by m ax R DS (on) 1s 100ms 10ms Tj=175°C Tc=25°C Single pulse 0.01 AM11270v1 10 -4 10 -3 10 -2 10 -1 tp(s) 10 -4 10 -2 K 0.2 0.05 0.02 0.01 0.1 Zth-pcb=k* Rthj-pcb Single pulse δ=0.5 10 0 10 1 10 2 10 -3 10 -1 Rthj-pcb=31.3°C/W PowerFlat_SI_C_Size ID 60 40 20 0 0 4 VDS(V) 8 (A) 2 6 80 5V 6V 7V VGS=10V AM11271v1 ID 60 40 20 0 0 4 VGS(V) 8 (A) 2 6 80 VGS=5V AM11272v1 BVDSS -75 TJ(°C) (norm) -25 75 25 125 0.90 0.94 0.98 1.02 1.06 1.10 ID=1mA AM11273v1 RDS(on) 18.8 18.7 18.6 18.5 0 8 ID(A) (m Ω) 4 12 18.9 19.0 19.1 19.2 VGS=10V 16 20 AM11274v1 |
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