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STL35N6F3 数据表(PDF) 1 Page - STMicroelectronics |
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STL35N6F3 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 17 page ![]() This is information on a product in full production. May 2012 Doc ID 16557 Rev 4 1/17 17 STL35N6F3 N-channel 60 V, 0.019 Ω, 10 A STripFET™ III Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features ■ N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance Applications ■ Switching applications Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on- resistance and gate charge to provide superior switching performance. Figure 1. Internal schematic diagram Order code VDSS RDS(on) max ID STL35N6F3 60 V < 0.022 Ω 10 A PowerFLAT™ 5x6 1 2 3 4 Table 1. Device summary Order code Marking Package Packaging STL35N6F3 35N6F3 PowerFLAT™ 5x6 Tape and reel www.st.com |
类似零件编号 - STL35N6F3 |
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类似说明 - STL35N6F3 |
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