STL35N6F3 datasheet(4/17 Pages) STMICROELECTRONICS

部件名	STL35N6F3

功能描述	N-channel 60 V, 0.019 廓, 10 A STripFET??III Power MOSFET in PowerFLAT??5x6 package

PDF	17 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 17 page

Electrical characteristics

STL35N6F3

4/17

Doc ID 16557 Rev 4

Electrical characteristics

(TJ = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 60 V,

VDS = 60 V, TC = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS= 10 V, ID= 10 A

0.019

0.022

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f = 1 MHz,

VGS = 0

762

173

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 30 V, ID = 10 A

VGS =10 V

(see Figure 13)

13.6

5.0

3.7

Gate input resistance

f=1 MHz open drain

3.2

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