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STL35N6F3 数据表(PDF) 3 Page - STMicroelectronics |
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STL35N6F3 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 17 page ![]() STL35N6F3 Electrical ratings Doc ID 16557 Rev 4 3/17 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID (1) 1. The value is rated according to Rthj-c Drain current (continuous) at TC = 25 °C 35 A ID (1) Drain current (continuous) at TC = 100 °C 25 A ID (2) 2. The value is rated according to Rthj-pcb Drain current (continuous) at Tpcb = 25 °C 10 A ID (2) Drain current (continuous) at Tpcb=100 °C 7 A IDM (3) 3. Pulse width limited by safe operating area Drain current (pulsed) 100 A PTOT (1) Total dissipation at TC = 25 °C 80 W PTOT (2) Total dissipation at Tpcb = 25 °C 5 W Tstg Storage temperature -55 to 175 °C Tj Operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit Rthj-pcb (1) 1. When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec Thermal resistance junction-pcb max 31.3 °C/W Rthj-case Thermal resistance junction-case max. 1.9 °C/W Table 4. Avalanche characteristics Symbol Parameter Max value Unit IAV Not-repetitive avalanche current 5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAV, VDD = 50 V) 409 mJ |
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