| 数据搜索系统,热门电子元器件搜索 |
|
STB155N3H6 数据表(PDF) 1 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STB155N3H6 数据表(HTML) 1 Page - STMicroelectronics |
|
1 / 18 page ![]() May 2011 Doc ID 018793 Rev 2 1/ 18 STB155N3H6 STD155N3H6 N-channel 30 V, 2.5 m Ω , 80 A, D²PAK, DPAK STripFET™ VI DeepGATE™ Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness Application ■ Switching applications ■ Automotive Description These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max ID STB155N3H6 30 V < 3 m Ω 80 A (1) 1. Limited by wire bonding STD155N3H6 30 V < 3 m Ω 80 A (1) DPAK 1 3 1 3 D²PAK AM01474v1 D (TAB or 2) G(1) S(3) Table 1. Device summary Order codes Marking Package Packaging STB155N3H6 155N3H6 D²PAK Tape and reel STD155N3H6 DPAK www.st.com |
类似零件编号 - STB155N3H6 |
|
类似说明 - STB155N3H6 |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |