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STB155N3H6 数据表(PDF) 5 Page - STMicroelectronics

部件名 STB155N3H6
功能描述  N-channel 30 V, 2.5 m , 80 A, D PAK, DPAK STripFET VI DeepGATE Power MOSFET
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB155N3H6 数据表(HTML) 5 Page - STMicroelectronics

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STB155N3H6, STD155N3H6
Electrical characteristics
Doc ID 018793 Rev 2
5/
Table 7.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 15 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
-
20
90
-
ns
ns
td(off)
tf
Turn-off delay time
Fall time
-
50
20
-
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
80
320
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 80 A, VGS = 0
-
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 24 V, TJ = 150 °C
(see Figure 15)
-
40
50
2.5
ns
nC
A



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