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STB155N3H6 数据表(PDF) 3 Page - STMicroelectronics

部件名 STB155N3H6
功能描述  N-channel 30 V, 2.5 m , 80 A, D PAK, DPAK STripFET VI DeepGATE Power MOSFET
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB155N3H6 数据表(HTML) 3 Page - STMicroelectronics

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STB155N3H6, STD155N3H6
Electrical ratings
Doc ID 018793 Rev 2
3/
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
Limited by wire bonding
Drain current (continuous) at TC = 25 °C
80
A
ID
Drain current (continuous) at TC = 100 °C
80
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25 °C
110
W
Derating factor
0.73
W/°C
Tstg
Storage temperature
-55 to 175
°C
Tj
Operating junction temperature
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
D²PAK
DPAK
Rthj-case
Thermal resistance junction-case max
1.36
°C/W
Rthj-pcb
(1)
1.
When mounted on 1 inch² 2 oz Cu board
Thermal resistance junction-pcb max
35
50
°C/W
Table 4.
Avalanche characteristics
Symbol
Parameters
Value
Unit
IAV
Not-repetitive avalanche current
40
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAV, VDD = 22 V)
525
mJ



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