STB155N3H6 datasheet(4/18 Pages) STMICROELECTRONICS

部件名	STB155N3H6

功能描述	N-channel 30 V, 2.5 m , 80 A, D PAK, DPAK STripFET VI DeepGATE Power MOSFET

PDF	18 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 18 page

Electrical characteristics

STB155N3H6, STD155N3H6

Doc ID 018793 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

Voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 20 V

VDS = 20 V,Tc = 125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 40 A

2.5

3.0

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS = 0

3650

765

390

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 15 V, ID = 80 A

VGS = 10 V

Figure 14

Intrinsic gate resistance

f = 1 MHz open drain

1.5

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