This is information on a product in full production.

February 2014

DocID022261 Rev 5

1/18

STL8DN6LF3

Automotive-grade dual N-channel 60 V, 22.5 m

Ω typ., 7.8 A STripFET™ III

Power MOSFET in a PowerFLAT™ 5x6 double island package

Datasheet — production data

Figure 1. Internal schematic diagram

Features

• Designed for automotive applications and

AEC-Q101 qualified

• Logic level V

GS(th)

• 175 °C junction temperature

• 100% avalanche rated

• Wettable flank package

Applications

• Switching applications

Description

This device is an N-channel enhancement mode

Power MOSFET produced using

STMicroelectronics’ STripFET™ III technology,

which is specifically designed to minimize on-

resistance and gate charge to provide superior

switching performance.

PowerFLAT™ 5x6

1

2

3

4

double island

Order code

STL8DN6LF3

60 V

30 m

Ω

7.8 A

Table 1. Device summary

Order code

Marking

Packaging

STL8DN6LF3

8DN6LF3

PowerFLAT™ 5x6 double island

Tape and reel

1.

For wettable flank option, please contact ST sale offices

www.st.com