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STL8DN6LF3 数据表(PDF) 5 Page - STMicroelectronics |
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STL8DN6LF3 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 18 page ![]() DocID022261 Rev 5 5/18 STL8DN6LF3 Electrical characteristics 18 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit I SD Source-drain current - 7.8 A I SDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 31.2 A V SD (2) 2. Pulsed: pulse duration= 300 μs, duty cycle 1.5% Forward on voltage I SD = 7.8 A, V GS =0 - 1.3 V t rr Reverse recovery time I SD = 7.8 A, di/dt = 100 A/μs, V DD =48 V, Tj=150 °C -30 ns Q rr Reverse recovery charge - 35 nC I RRM Reverse recovery current - 2.35 A |
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