DocID022261 Rev 5

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STL8DN6LF3

Electrical ratings

18

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DS

Drain-source voltage

60

V

V

GS

Gate-source voltage

±20

V

I

D

(1),(2)

1.

Specified by design. Not subject to production test.

2.

Current is limited by bonding, with an R

thJC

= 2.3 °C/W the chip is able to carry 30 A at 25 °C.

Drain current (continuous) at T

C

= 25 °C

20

A

I

D

Drain current (continuous) at T

C

= 100 °C

20

A

I

D

(4)

Drain current (continuous) at T

pcb

= 25 °C

7.8

A

I

D

(4)

Drain current (continuous) at T

pcb

=100 °C

5.5

A

I

DM

(3),(4)

3.

Pulse width limited by safe operating area

4.

When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec

Drain current (pulsed)

31.2

A

P

TOT

Total dissipation at T

C

= 25°C

65

W

P

TOT

(4)

Total dissipation at T

pcb

= 25°C

4.3

W

I

AV

Not-repetitive avalanche current

7.8

A

E

AS

(5)

5.

Starting T

J

= 25 °C, I

D

= 8 A, V

DD

= 25 V, per channel, 100% tested.

Single pulse avalanche energy

190

mJ

T

J

Operating junction temperature

-55 to 175

°C

T

stg

Storage temperature

°C

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

R

thj-case

Thermal resistance junction-case

2.3

°C/W

R

thj-pcb

(1)

1.

When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec

Thermal resistance junction-pcb

35

°C/W