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STL8DN6LF3 数据表(PDF) 4 Page - STMicroelectronics

部件名 STL8DN6LF3
功能描述  Automotive-grade dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL8DN6LF3 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STL8DN6LF3
4/18
DocID022261 Rev 5
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage (V
GS
= 0)
I
D
= 250 μA60
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 60 V
1
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20 V
±
100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA1
2.5
V
R
DS(on)
Static drain-source
on- resistance
V
GS
= 10 V, I
D
= 4 A
22.5
30
m
Ω
V
GS
= 5 V, I
D
= 4 A
30
44
m
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
DS
=25 V, f=1 MHz,
V
GS
=0
-668
-
pF
C
oss
Output capacitance
-
144
-
pF
C
rss
Reverse transfer
capacitance
-14
-
pF
Q
g
Total gate charge
V
DD
=30 V, I
D
= 7.8 A
V
GS
=10 V
Figure 15
-13
-
nC
Q
gs
Gate-source charge
-
2.4
-
nC
Q
gd
Gate-drain charge
-
3
-
nC
R
G
Intrinsic gate resistance
f=1 MHz open drain
-
4
-
Ω
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
DD
=30 V, I
D
= 4 A,
R
G
=4.7
Ω, V
GS
=10 V
Figure 14
-9
-
ns
t
r
Rise time
-
7.7
-
ns
t
d(off)
Turn-off delay time
-
32.5
-
ns
t
f
Fall time
-
5
-
ns



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