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M24C08-RMC6TG 数据表(PDF) 23 Page - STMicroelectronics |
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M24C08-RMC6TG 数据表(HTML) 23 Page - STMicroelectronics |
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23 / 38 page ![]() DocID023924 Rev 4 23/38 M24C08-W M24C08-R M24C08-F DC and AC parameters 37 Table 11. Cycling performance Symbol Parameter Test condition(1) 1. Cycling performance for products identified by process letter T. Max. Unit Ncycle Write cycle endurance TA ≤ 25 °C, VCC(min) < VCC < VCC(max) 4,000,000 Write cycle TA = 85 °C, VCC(min) < VCC < VCC(max) 1,200,000 Table 12. Memory cell data retention Parameter Test condition Min. Unit Data retention(1) 1. For products identified by process letter T. The data retention behavior is checked in production, while the 200-year limit is defined from characterization and qualification results. TA = 55 °C 200 Year |
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