M24C08-RMC6TG datasheet(24/38 Pages) STMICROELECTRONICS

24 / 38 page

DC and AC parameters

M24C08-W M24C08-R M24C08-F

24/38

DocID023924 Rev 4

Table 13. DC characteristics (M24C08-W, device grade 6)

Symbol

Parameter

Test conditions (in addition to those

in Table 5 and Table 9)

Min.

Max.

Unit

ILI

Input leakage current

(SCL, SDA)

VIN = VSS or VCC, device in Standby

mode

-± 2

µA

ILO

Output leakage

current

SDA in Hi-Z, external voltage applied

on SDA: VSS or VCC

-± 2

µA

ICC

Supply current (Read)

VCC = 5.5 V, fc = 400 kHz

1(1)

1. 2 mA (at VCC = 5 V) for previous devices identified by process letters G or S.

VCC = 2.5 V, fc = 400 kHz

ICC0

Supply current (Write)

Value overaged over tW,

2.5 V ≤ VCC ≤ 5.5 V

-1(2)

2. Characterized only (not tested in production) for devices identified by process letter T. ICC0(max)is lower

than 0.5 mA when writing data with an ambient temperature greater than 25 °C.

ICC1

Standby supply

current

Device not selected(3),

VIN = VSS or VCC, VCC = 2.5 V

3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the

completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).

-2(4)

4. 1 µA for previous devices identified by process letters G or S.

µA

Device not selected(3),

VIN = VSS or VCC, VCC = 5.5 V

-3(4)

µA

VIL

Input low voltage

(SCL, SDA, WC,

E2)(5)

5. Ei inputs should be tied to Vss (see Section 2.3).

–0.45

0.3 VCC

VIH

Input high voltage

(SCL, SDA, WC)

-0.7 VCC VCC +1

VOL

Output low voltage

IOL = 2.1 mA, VCC = 2.5 V or

IOL = 3 mA, VCC = 5.5 V

-0.4

M24C08-RMC6TG 数据表(PDF) 24 Page - STMicroelectronics

M24C08-RMC6TG 数据表(HTML) 24 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38

数据表下载