STPS40M60CT datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

STPS40M60C

2/10

Doc ID 018813 Rev 1

Characteristics

When the two diodes 1 and 2 are used simultaneously:

ΔT

j(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 2.

Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless

otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

IF(RMS) Forward rms current

IF(AV)

Average forward current,

δ = 0.5

Tc = 130 °C

Tc = 120 °C

Per diode

Per device

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

220

PARM

(1)

For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the

avalanche energy measurements and diode validation in the avalanche are provided in the application

notes AN1768 and AN2025.

Repetitive peak avalanche power

Tj = 25 °C, tp = 1 µs

23000

VARM

(2)

See Figure 13

Maximum repetitive peak

avalanche voltage

tp < 1 µs, Tj < 150 °C, IAR < 86.3 A

Tstg

Storage temperature range

-65 to +175

°C

Maximum operating junction temperature(3)

condition to avoid thermal runaway for a diode on its own heatsink

150

°C

Table 3.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

per diode

1.40

°C/W

total

0.95

Rth(c)

Coupling

0.50

°C/W

dPtot

dTj

Rth(j-a)

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