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STPS40M60CT 数据表(PDF) 3 Page - STMicroelectronics |
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STPS40M60CT 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() STPS40M60C Characteristics Doc ID 018813 Rev 1 3/10 To evaluate the conduction losses use the following equation: P = 0.395 x IF(AV) + 0.007 x IF 2 (RMS) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = 60 V - 25 110 µA Tj = 125 °C - 85 mA VF (2) Forward voltage drop Tj = 25 °C IF = 5A - 0.430 0.460 V Tj = 125 °C - 0.325 0.355 Tj = 25 °C IF = 10 A - 0.470 0.505 Tj = 125 °C - 0.385 0.435 Tj = 25 °C IF = 20 A - 0.540 0.595 Tj = 125 °C - 0.475 0.535 Tj = 25 °C IF = 40 A - 0.645 0.730 Tj = 125 °C - 0.605 0.675 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % Figure 2. Average forward power dissipation versus average forward current (per diode) Figure 3. Average forward current versus ambient temperature ( δ = 0.5, per diode) P (W) F(AV) 0 2 4 6 8 10 12 14 16 0 2 4 6 8 101214 1618202224 26 δ=0.05 δ=0.1 δ=0.2 δ=0.5 T δ=tp/T tp I (A) F(AV) δ=1 I (A) F(AV) 0 2 4 6 8 10 12 14 16 18 20 22 24 0 25 50 75 100 125 150 Rth(j-a)=Rth(j-c) T (°C) amb |
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