STPS40M60CT datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STPS40M60C

4/10

Doc ID 018813 Rev 1

Figure 4.

Normalized avalanche power

derating versus pulse duration

Figure 5.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

P(tp)

(1µs)

ARM

t (µs)

0.2

0.4

0.6

0.8

1.2

100

125

150

P(T )

(25 °C)

ARM

T (°C)

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 7.

Relative thermal impedance

junction to case versus pulse

duration

I (A)

100

120

140

160

180

200

220

240

260

1.E-03

1.E-02

1.E-01

1.E+00

TC=25°C

TC=75°C

TC=125°C

δ =0.5

t(s)

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

t (s)

Figure 8.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 9.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

I (mA)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

010

Tj=150°C

Tj=125°C

Tj=25°C

Tj=100°C

Tj=50°C

Tj=75°C

V (V)

C(pF)

100

1000

10000

110

100

F=1MHz

VOSC=30mVRMS

Tj=25°C

V (V)

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