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AN1506 数据表(PDF) 10 Page - STMicroelectronics |
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AN1506 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 14 page ![]() AN1506 - APPLICATION NOTE 10/14 Figure 10. Reverse conduction of the power MOSFET through the intrinsic body diode or through the channel (ID=5A/div, VF=0.5V/div, VGS=5 V/div, t=5ms/div) 5.2. Power Losses Measurement from the Thermal Behavior. The total power losses Ptot, in the steady-state conditions as before described, are related to the actual heat sink temperature by relation: where TH is the heat sink temperature, TA is the ambient temperature (25°C), and Rth, HA is the thermal resistance between the heat sink and the ambient. Relation (10) can be used to indirectly measure the total power losses, by measuring the ambient and heat sink temperatures and knowing the thermal resistance. First of all the thermal resistance has been experimentally established, by means of a specific test with known power condition, at Rth, HA=15°C/W accounting for the actual layout. Hence, the total power losses expressed by relation (9) have been evaluated by (10) measuring the temperatures in the prototype in several loaded conditions. A separation in switching and conduction power losses has been carried out by calculating Pcon through equation (8) and Psw as difference of the total and the conduction power losses. The main results obtained are reported in the Table 2. The same test procedure has been repeated with a different hysteresis band (about 18%), which implies a different ripple on the phase currents of the motor, in order to determine the influence of the switching frequency on the thermal behavior of the devices. In such a condition the switching frequency reduced to 1kHz. The traces of the motor currents for this new operating condition are reported in figure 11. The P tot T H T A – R th HA , ------------------- = 10 () |
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