AN1506 - APPLICATION NOTE

5/14

Since the performances of the body-drain diode could be conveniently exploited in bridge topologies, the

characteristics of this intrinsic diode have been tested. A favorable characteristic of this internal body-

drain diode is its high dv/dt capability; crucial in all bridge topologies such as motor drives or

uninterruptible power supply (UPS). For the used device the allowed limit is 10V/ns. Finally in figure 5 the

static characteristics of the new MOSFET are reported. In forward conduction (positive drain voltage) the

I/V characteristic of the MOSFET is traced. In reverse conduction two static characteristics are reported

relative to the MOSFET and the intrinsic diode: at zero source-gate voltage the current will flow

exclusively as a diode current; with a gate bias voltage the current will flow through the MOSFET as in

the case of synchronous rectifier applications.

Figure 5. Static characteristics of the new MOSFET and its body-drain diode at a temperature of

125°C

E

off

E

on

60

50

40

30

20

10

0

510

15

20

25

I [A]

E [µJ]

150

100

50

-0

-50

-100

-150

1.5

-1

-0.5

0

0.5

1

1.5

DIODE

MOS

V

I