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AN1506 数据表(PDF) 4 Page - STMicroelectronics

部件名 AN1506
功能描述  A MOTOR DRIVES SYSTEM FOR WHEELCHAIR APPLICATIONS
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AN1506 数据表(HTML) 4 Page - STMicroelectronics

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AN1506 - APPLICATION NOTE
4/14
The source mask does not need to be aligned within the strip itself; the only critical parameter is the
width of the strip (see figure 1), which depends on the equipment resolution. As can be argued from the
above description, the process benefits in a reduced number of feature sizes since it is now only
dependent on a single feature size, and higher packing densities can be obtained in comparison to the
conventional cell-geometry process. The new process is also named Extremely High Density (EHD)
referring to the possibility of getting devices with very high equivalent cell densities. Figure 3 compares
the obtainable channel perimeter density and thus the current density of the two structures.
Figure 3. Channel perimeter density comparison of cell-based and strip-based structures
4. STATIC AND DYNAMIC BEHAVIOR OF THE NEW DEVICE.
The resulting MOSFET device of the strip-based process shows very interesting characteristics:
extremely high packing density and low on-state resistance, rugged avalanche characteristics, and less
critical alignment steps. First of all we have selected the device STB80NF55, which was the candidate
for the actual application in an AC drive. The drive is described with more details in the next section. The
main electrical quantities of the component are summarized in Table 1.
Table 1. STB80NF55 Main Electrical Characteristics
A preliminary characterization in a dc chopper working on inductive load has been done. Looking for the
specific application supplied at a dc bus of 24V, several commutation tests (turn on and turn off) have
been done at this voltage while the current assumed a variable value. The energy losses in such
conditions are reported in figure 4. Linear dependence of the energy versus the switched current is
evident both for the turn on and turn off transients.
Ron
[m
Ω]
BVDSS
[V]
QG
[nC]
Qsw
[nC]
Qgd
[nC]
trr
[nS]
Qrr
[nC]
Irr
[A]
Package
6.5
55
180
90
66
80
245
6.4
D2PAK
Minimum feature size [µm]
Cell-based layout
Strip-based layout
30
25
20
15
10
87
65
4
3
2
1



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