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AN1506 数据表(PDF) 4 Page - STMicroelectronics |
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AN1506 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 14 page ![]() AN1506 - APPLICATION NOTE 4/14 The source mask does not need to be aligned within the strip itself; the only critical parameter is the width of the strip (see figure 1), which depends on the equipment resolution. As can be argued from the above description, the process benefits in a reduced number of feature sizes since it is now only dependent on a single feature size, and higher packing densities can be obtained in comparison to the conventional cell-geometry process. The new process is also named Extremely High Density (EHD) referring to the possibility of getting devices with very high equivalent cell densities. Figure 3 compares the obtainable channel perimeter density and thus the current density of the two structures. Figure 3. Channel perimeter density comparison of cell-based and strip-based structures 4. STATIC AND DYNAMIC BEHAVIOR OF THE NEW DEVICE. The resulting MOSFET device of the strip-based process shows very interesting characteristics: extremely high packing density and low on-state resistance, rugged avalanche characteristics, and less critical alignment steps. First of all we have selected the device STB80NF55, which was the candidate for the actual application in an AC drive. The drive is described with more details in the next section. The main electrical quantities of the component are summarized in Table 1. Table 1. STB80NF55 Main Electrical Characteristics A preliminary characterization in a dc chopper working on inductive load has been done. Looking for the specific application supplied at a dc bus of 24V, several commutation tests (turn on and turn off) have been done at this voltage while the current assumed a variable value. The energy losses in such conditions are reported in figure 4. Linear dependence of the energy versus the switched current is evident both for the turn on and turn off transients. Ron [m Ω] BVDSS [V] QG [nC] Qsw [nC] Qgd [nC] trr [nS] Qrr [nC] Irr [A] Package 6.5 55 180 90 66 80 245 6.4 D2PAK Minimum feature size [µm] Cell-based layout Strip-based layout 30 25 20 15 10 87 65 4 3 2 1 |
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