Overview

PM0075

10/31

Doc ID 17863 Rev 2

The main Flash memory can be protected against different types of unwanted access

(read/write/erase). There are two types of protection:

●

Page Write Protection

●

Read Protection

Refer to Section 2.4 for more details.

During a write operation to the Flash memory, any attempt to read the Flash memory will

stall the bus. The read operation will proceed correctly once the write operation has

completed. This means that code or data fetches cannot be made while a write/erase

operation is ongoing.

For write and erase operations on the Flash memory (write/erase), the internal RC oscillator

(HSI) must be ON.

The Flash memory can be programmed and erased using in-circuit programming and in-

application programming.

Note:

In the low-power modes, all Flash memory accesses are aborted. Refer to the

STM32F10xxx reference manual for further information.