P4C164LL datasheet(5/10 Pages) PYRAMID

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P4C164LL - VERY LOW POWER 8K x 8 STATIC CMOS RAM

Page 5

Document # SRAM116 REV 04

AC CHARACTERISTICS—WRITE CYCLE

(Over Recommended Operating Temperature & Supply Voltage)

Symbol Parameter

-80

-90

-100

-120

Unit

Min

Max

Min

Max

Min

Max

Min

Max

Write Cycle Time

100

120

Chip Enable Time to End of Write

100

Address Valid to End of Write

100

Address Setup Time

Write Pulse Width

Address Hold Time

Data Valid to End of Write

Data Hold Time

Write Enable to Output in High Z

Output Active from End of Write

TIMIng WAVEFORM OF WRITE CYCLE nO. 1 (WE COnTROLLED)(6)

Notes:

11. CE

1 and WE must be LOW, and CE2 HIGH for WRITE cycle.

12. OE is LOW for this WRITE cycle to show t

WZ and tOW.

13. If CE

1 goes HIGH, or CE2 goes LOW, simultaneously with WE HIGH,

the output remains in a high impedance state

14. Write Cycle Time is measured from the last valid address to the first

transitioning address.

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