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P4C164LL 数据表(PDF) 1 Page - Pyramid Semiconductor Corporation

部件名 P4C164LL
功能描述  VERY LOW POWER 8Kx8 STATIC CMOS RAM
PDF  10 Pages
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制造商  PYRAMID [Pyramid Semiconductor Corporation]
网页  http://www.pyramidsemiconductor.com
标志 PYRAMID - Pyramid Semiconductor Corporation

P4C164LL 数据表(HTML) 1 Page - Pyramid Semiconductor Corporation

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Document # SRAM116 REV 04
Revised June 2014
P4C164LL
VERY LOW POWER 8Kx8
STATIC CMOS RAM
FEATURES
V
CC Current (Commercial/Industrial)
— Operating: 55 mA
— CMOS Standby: 3 µA
Access Times
—80/100 (Commercial or Industrial)
—90/120 (Military)
Single 5 Volts ±10% Power Supply
Easy Memory Expansion Using CE
1, CE2 and OE
Inputs
Common Data I/O
Three-State Outputs
Fully TTL Compatible Inputs and Outputs
Advanced CMOS Technology
Automatic Power Down
Packages
—28-Pin 300 and 600 mil DIP
—28-Pin 330 mil SOP
FUnCTIOnAL BLOCk DIAgRAM
PIn COnFIgURATIOnS
DIP (P5, P6, C5-1), SOP (S5)
TOP VIEW
DESCRIPTIOn
The P4C164LL is a 64K density low power CMOS static
RAM organized as 8Kx8. The CMOS memory requires
no clocks or refreshing, and has equal access and cycle
times. Inputs are fully TTL-compatible. The RAM operates
from a single 5V±10% tolerance power supply.
Access times of 80 and 100 ns are available for commercial
and industrial temperatures; access times of 90 and 100
ns are available for military temperature. CMOS is utilized
to reduce power consumption to a low level.
The P4C164LL device provides asynchronous operation
with matching access and cycle times.
Memory locations are specified on address pins A
0 to A12.
Reading is accomplished by device selection (CE
1 LOW,
CE
2 HIGH ) and output enabling (OE) while write enable
(WE) remains HIGH. By presenting the address under
these conditions, the data in the addressed memory loca-
tion is presented on the data input/output pins. The input/
output pins stay in the HIGH Z state when either CE
1 or
OE is HIGH or WE or CE
2 is LOW.
Package options for the P4C164LLinclude 28-pin 300 and
600 mil DIP and 28-pin 330 mil SOP packages.


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