P4C164LL - VERY LOW POWER 8K x 8 STATIC CMOS RAM

Page 3

Document # SRAM116 REV 04

Symbol

Parameter

Test Conditions

Max

Unit

C

IN

Input Capacitance

V

7

pF

C

OUT

Output Capacitance

V

9

pF

POWER DISSIPATIOn CHARACTERISTICS VS. SPEED

Symbol

Parameter

Temperature Range

*

-80

-90

-100

-120

Unit

I

CC

Dynamic Operating Current

Com / Ind / Military

55

55

55

55

mA

* Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate. The device is continuously

enabled for writing, i.e. CE

Sym Parameter

-80

-90

-100

-120

Unit

Min

Max

Min

Max

Min

Max

Min

Max

t

RC

Read Cycle Time

80

90

100

120

ns

t

AA

Address Access Time

80

90

100

120

ns

t

AC

Chip Enable Access Time

80

90

100

120

ns

t

OH

Output Hold from Address Change

10

10

10

10

ns

t

LZ

Chip Enable to Output in Low Z

10

10

10

10

ns

t

HZ

Chip Disable to Output in High Z

30

30

30

30

ns

t

OE

Output Enable Low to Data Valid

40

40

40

40

ns

t

OLZ

Output Enable Low to Low Z

5

5

5

5

ns

t

OHZ

Output Enable High to High Z

20

20

20

20

ns

t

PU

Chip Enable to Power Up Time

0

0

0

0

ns

t

PD

Chip Disable to Power Down Time

80

90

100

120

ns

AC ELECTRICAL CHARACTERISTICS—READ CYCLE

(Over Recommended Operating Temperature & Supply Voltage)