P4C164LL - VERY LOW POWER 8K x 8 STATIC CMOS RAM

Page 2

Document # SRAM116 REV 04

DC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Min

Max

Unit

V

CC

Supply Voltage with Respect to GND

-0.5

7.0

V

V

TERM

Terminal Voltage with Respect to GND (up to 7.0V)

-0.5

VCC + 0.5

V

T

A

Operating Ambient Temperature

-55

125

°C

S

TG

Storage Temperature

-65

150

°C

I

OUT

Output Current into Low Outputs

25

mA

I

LAT

Latch-up Current

> 200

mA

RECOMMEnDED OPERATIng TEMPERATURE & SUPPLY VOLTAgE

grade

Ambient Temp

Supply Voltage

Commercial

0°C to 70°C

4.5V ≤ V

Industrial

-40°C to +85°C

4.5V ≤ V

Military

-55°C to +125°C

4.5V ≤ V

Sym Parameter

Test Conditions

Min

Max

Unit

V

OH

Output High Voltage

(I/O

I

2.4

V

V

OL

Output Low Voltage

(I/O

I

0.4

V

V

IH

Input High Voltage

2.2

V

V

V

IL

Input Low Voltage

0.8

V

I

LI

Input Leakage Current

GND ≤ V

Com / Ind

-2

+2

µA

Military

-5

+5

I

LO

Output Leakage Current

GND ≤ V

CE

Com / Ind

-2

+2

µA

Military

-10

+10

I

SB

V

TTL Standby Current

(TTL Input Levels)

V

CE

Com / Ind

100

µA

Military

400

I

SB1

V

CMOS Standby Current

(CMOS Input Levels)

V

CE

Com / Ind

3

µA

Military

25

notes:

1. Stresses greater than those listed under MAxIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification

is not implied. Exposure to MAxIMUM rating conditions for extended

periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per

minute of air flow.

3. Transient inputs with V

–100mA, respectively, are permissible for pulse widths up to 20ns.

4. This parameter is sampled and not 100% tested.