© 1997 Microchip Technology Inc.

Preliminary

DS21209A-page 1

M

93LC66A/B

FEATURES

• Single supply with operation down to 2.5V

• Low power CMOS technology

- 1 mA active current (typical)

-1

µA standby current (maximum)

• 512 x 8 bit organization (93LC66A)

• 256 x 16 bit organization (93LC66B)

• Self-timed ERASE and WRITE cycles

(including auto-erase)

• Automatic ERAL before WRAL

• Power on/off data protection circuitry

• Industry standard 3-wire serial interface

• Device status signal during ERASE/WRITE cycles

• Sequential READ function

• 1,000,000 E/W cycles guaranteed

• Data retention > 200 years

• 8-pin PDIP/SOIC and 8-pin TSSOP packages

• Available for the following temperature ranges:

BLOCK DIAGRAM

DESCRIPTION

The Microchip Technology Inc. 93LC66A/B are 4K-bit,

low voltage serial Electrically Erasable PROMs. The

device memory is configured as x8 (93LC66A) or

x16 bits (93LC66B). Advanced CMOS technology

makes these devices ideal for low power nonvolatile

memory applications. The 93LC66A/B is available in

standard 8-pin DIP, surface mount SOIC, and TSSOP

packages. The 93LC66AX/BX are only offered in a 150-

mil SOIC package.

PACKAGE TYPE

- Commercial (C):

0

°C to +70°C

- Industrial (I):

-40

°C to +85°C

Vcc

Vss

DI

CS

CLK

DO

MEMORY

ARRAY

ADDRESS

DECODER

ADDRESS

COUNTER

DATA

REGISTER

OUTPUT

BUFFER

MODE

DECODE

CLOCK

GENERATOR

LOGIC

CS

CLK

DI

DO

1

2

3

4

8

7

6

5

Vcc

NC

NC

Vss

CS

CLK

DI

DO

NC

NC

Vss

NU

Vcc

CS

CLK

NC

Vss

DO

DI

CS

CLK

DI

DO

1

2

3

4

8

7

6

5

Vcc

NC

NC

Vss

TSSOP

SOIC

SOIC

1

2

3

4

DIP

8

7

6

5

1

2

3

4

8

7

6

5

Microwire is a registered trademark of Motorola.