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LP2953 数据表(PDF) 22 Page - Texas Instruments |
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LP2953 数据表(HTML) 22 Page - Texas Instruments |
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22 / 41 page ![]() LP2952-N, LP2952A, LP2953, LP2953A SNVS095F – MAY 2004 – REVISED MARCH 2015 www.ti.com Typical Applications (continued) 8.2.1.1 Design Requirements For this design example, use the parameters listed in Table 1 as the input parameters. Table 1. Design Parameters DESIGN PARAMETER DESIGN REQUIREMENT Input voltage 6 V, ±10%, provided by the DC-DC converter switching at 1 MHz Output voltage 5 V, ±1% Output current 250 mA (maximum), 1 mA (minimum) RMS noise, 10 Hz to 100 kHz 1 mV typical PSRR at 1 kHz 50 dB typical 8.2.1.2 Detailed Design Procedure At 150-mA loading, the dropout of the LP2952 and LP2953 has 600-mV maximum dropout over temperature — thus, a 1500-mV headroom is sufficient for operation over both input and output voltage accuracy. The efficiency of the LP2952 and LP2953 in this configuration is VOUT / VIN = 83.3%. Input and output capacitors are selected in accordance with the External Capacitors section. Ceramic capacitances of 1 μF for the input and one 2.2-μF capacitor for the output are selected. With an efficiency of 83.3% and a 250-mA maximum load, the internal power dissipation is 250 mW, which corresponds to a 19.2°C junction temperature rise for the SOIC package. With a VIN – VOUT differential of 1 V and a maximum load current of 250 mA the internal junction temperature (TJ) of the SOIC package will rise 19.2°C above the ambient temperature. With an 85°C maximum ambient temperature, the junction temperature is at 104.2°C. To minimize noise, a bypass capacitor of 100 pF is selected between OUT and FEEDBACK pins. 8.2.1.3 Application Curves Figure 34. Line Transient Response Figure 35. Load Transient Response 22 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: LP2952-N LP2952A LP2953 LP2953A |
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