MX043G datasheet(3/4 Pages) MICROSEMI

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100% KND (Known-Good-Die) SCREENING

100% die probe at Tambient= 25°C for BVDSS, VGSth, IDSS, IGSS, VSD, RDSon

100% Visual Inspection i.a.w. method 2072 of MIL-STD-750

DIE ELEMENT EVALUATION

Wafer Lot Evaluation Testing (WLAT) i.a.w. method 5001 of MIL-STD-750, including SEM

Unclamped Inductive Switching (IAS) i.a.w. method 3470 of MIL-STD-750 at VGSpeak= 15 V, L= 100µH, IAS= 132 A

Gate Stress Test for 250

µs at VGS= 30 Vdc.

Safe Operating Area i.a.w. method 3474 of MIL-STD-750 at VDS= 160 V, ID= 2.8 A for 10 ms

High Temperature Gate Bias i.a.w. method 1042 cond.B of MIL-STD-750: 48 hrs at Tambient= 150°C, Drain shorted to Source and

VGS= 16 V

High Temperature Reverse Bias i.a.w. method 1042 cond.A of MIL-STD-750: 240 hrs at Tambient= 150°C, Gate shorted to Source

and VDS= 160 V

Final DC Electrical Testing at Tambient= 25°C, 125°C and -55°C

Temperature Cycling i.a.w. method 1051 of MIL-STD-750, 100 cycles, -55

°C to +150°C

Group A Electrical Testing including dynamic parameters

Steady State Operational Life Bias i.a.w. method 1042 cond.A of MIL-STD-750: 1000 hrs at Tambient= 150°C, Gate shorted to Source

and VDS= 160 V

Final DC Electrical Testing at Tambient= 25°C, 125°C and -55°C

Die Attach Evaluation i.a.w. method 2017 of MIL-STD-750

Bond Strength Evaluation i.a.w. 2037 of MIL-STD-750

RADIATION EVALUATION

Total Dose Irradiation i.a.w. method 1019 of MIL-STD-750, dose= 100 kRAD, Drain shorted to Source, VGS= 10V

Total Dose Irradiation i.a.w. method 1019 of MIL-STD-750, dose= 100 kRAD, Gate shorted to Source, VDS= 160V

Evaluation criteria: no degradation of the DC electrical parameters exceeding the data sheet limits allowed after total dose irradiation.

MX043G 数据表(PDF) 3 Page - Microsemi Corporation