MX043G datasheet(2/4 Pages) MICROSEMI

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DESCRIPTION

SYMBOL

CONDITIONS

MIN

TYP.

MAX

UNIT

Drain-to-Source Breakdown Voltage

(Gate Shorted to Source)

BVDSS

V GS = 0 V, ID = 1 mA

200

Temperature Coefficient of the Drain-to-Source

Breakdown Voltage

∆BV

DSS/∆TJ

tbd

°C

Gate Threshold Voltage

V GS(th)

V DS = VGS, ID = 1 mA,

TJ = 25°C

TJ = 125°C

TJ = -55°C

1.5

0.5

4.0

5.0

Gate-to-Source Leakage Current

IGSS

V GS = ±20 VDC, VDS = 0

TJ = 25°C

TJ = 125°C

±100

±200

Drain-to-Source Leakage Current (Zero Gate

Voltage Drain Current)

IDSS

V DS =0.8•

BVDSS

TJ = 25°C

V GS = 0 V

TJ = 125°C

250

µA

Static Drain-to-Source On-State Resistance (1)

RDS(on)

V GS= 12V, ID= 28A

TJ = 25°C

ID= 25A

TJ = 125°C

0.043

0.050

0.093

Ω

Forward Transconductance (1)

gfs

V DS ≥ 10 V; ID = 50 A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Ciss

Coss

Crss

V GS = 0 V, VDS = 25 V, f = 1 MHz

4400

900

280

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Td(on)

td(off)

V GS = 12 V, VDS = 100 V,

ID = 44 A, RG = 2.35 Ω

100

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (Miller) Charge

Qg(on)

Qgs

Qgd

V GS = 12 V, VDS = 100V, ID = 44 A

160

180

Body Diode Forward Voltage (1)

V SD

IF = IS, VGS = 0 V

0.6

1.8

Reverse Recovery Time (Body Diode)

trr

IF = 10 A, -di/dt = 100 A/µs,

TJ =25 °C

560

Electrical Parameters @ 25

°C (unless otherwise specified)

MX043J

MX043G

Mechanical Outline

ShelFit™

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