 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
MX043G 数据表(PDF) 1 Page - Microsemi Corporation |
|
|
|||||||||||||||||||||||||||||
MX043G 数据表(HTML) 1 Page - Microsemi Corporation |
|
|
1 / 4 page  Features • Harris FSC260R die • total dose: 100 kRAD(Si) within pre-radiation parameter limits • dose rate: 3 x 109RAD(Si)/sec @ 80%BV DSS typical • dose rate: 2 x 1012RAD(Si)/sec @ ID ≤IDM typical • neutron: 1013 neutrons/cm2 within pre-radiation parameter limits • photocurrent: 17 nA/RAD(Si)/sec typical • rated Safe Operating Area Curve for Single event Effects • rugged polysilicon gate cell structure with ultrafast body diode • low inductance surface mount power package available with “J-leads” (MX043J) or “gullwing-leads” (MX043G) • very low thermal resistance • reverse polarity available upon request add suffix “R”st MX043J MX043G 200 Volts 44 Amps 50 m Ω DESCRIPTION SYMBOL MAX. UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C BVDSS 200 Volts Drain-to-Gate Breakdown Voltage @ T J ≥ 25° C, RGS= 1 MΩ BVDGR 200 Volts Continuous Gate-to-Source Voltage VGS +/-20 Volts Transient Gate-to-Source Voltage VGSM +/-30 Volts Continuous Drain Current Tj= 25 °C Tj= 100 °C ID25 ID100 44 28 Amps Peak Drain Current, pulse width limited by TJmax IDM 132 Amps Repetitive Avalanche Current IAR 44 Amps Repetitive Avalanche Energy EAR tbd mJ Single Pulse Avalanche Energy EAS tbd mJ Power Dissipation PD 300 Watts Junction Temperature Range Tj -55 to +125 °C Storage Temperature Range Tstg -55 to +125 °C Continuous Source Current (Body Diode) IS 44 Amps Pulse Source Current (Body Diode) ISM 132 Amps Thermal Resistance, Junction to Case θ JC 0.25 °C/W Weight - grams SINGLE EVENT Ion Species typical LET (MeV/mg/cm) typical range ( µ) VGS VDSmax EFFECTS Ni 26 43 -20V 200V SAFE Br 37 36 -5V 200V OPERATING Br 37 36 -10V 160V AREA Br 37 36 -15V 100V (SEESOA) Br 37 36 -20V 40V Maximum Ratings @ 25 °C (unless otherwise specified) Datasheet# MSC0857 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET Notes (1) Pulse test, t ≤ 300 µ s, duty cycle δ≤ 2% (2) Microsemi Corp. does not manufacture the mosfet die; contact company for details. |
类似零件编号 - MX043G |
|
类似说明 - MX043G |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
