© Semiconductor Components Industries, LLC, 2000

September, 2004 − Rev. XXX

1

Publication Order Number:

MMDF2C01HD/D

MMDF2C01HD

Preferred Device

Power MOSFET

2 Amps, 12 Volts

Complementary SO−8, Dual

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a very low reverse recovery time.

MiniMOS

t devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc−dc converters, and power management in portable

and battery powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor controls

in mass storage products such as disk drives and tape drives.

Battery Life

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

N−Channel

P−Channel

20

12

Vdc

Gate−to−Source Voltage

± 8.0

Vdc

Drain Current − Continuous

N−Channel

P−Channel

− Pulsed

N−Channel

P−Channel

5.2

3.4

48

17

A

Operating and Storage Temperature Range

− 55 to

150

°C

(Note 2.)

2.0

Watts

Thermal Resistance − Junction to Ambient

(Note 2.)

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from case for 10 seconds.

260

°C

1. Negative signs for P−Channel device omitted for clarity.

2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with

one die operating, 10 sec. max.

N−Source

1

2

3

4

8

7

6

5

Top View

N−Gate

P−Source

P−Gate

N−Drain

N−Drain

P−Drain

P−Drain

2 AMPERES

12 VOLTS

Device

Package

Shipping

ORDERING INFORMATION

MMDF2C01HDR2

SO−8

2500 Tape & Reel

http://onsemi.com

D

S

G

P−Channel

D

S

G

N−Channel

SO−8, Dual

CASE 751

STYLE 14

LYWW

MARKING

DIAGRAM

D2C01

D2C01 = Device Code

L

= Location Code

Y

= Year

WW

= Work Week

PIN ASSIGNMENT

1

8

Preferred devices are recommended choices for future use

and best overall value.