MMDF2C01HD datasheet(3/16 Pages) ONSEMI

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MMDF2C01HD

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ELECTRICAL CHARACTERISTICS − continued (TA = 25°C unless otherwise noted) (Note 6.)

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS

− continued (Note 8.)

Total Gate Charge

(N)

(P)

−

9.2

9.3

Gate−Source Charge

(VDS = 10 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc)

(N)

(P)

−

1.3

0.8

−

Gate−Drain Charge

(VDS = 6.0 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc)

(N)

(P)

−

3.5

4.0

−

VGS = 4.5 Vdc)

(N)

(P)

−

3.0

−

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C)

Forward Voltage (Note 7.)

(IS = 4.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc)

VSD

(N)

(P)

−

0.95

1.69

1.1

2.0

Vdc

Reverse Recovery Time

trr

(N)

(P)

−

(IF = IS,

(N)

(P)

−

(IF = IS,

dIS/dt = 100 A/µs)

(N)

(P)

−

Reverse Recovery Stored

Charge

QRR

(N)

(P)

−

0.028

0.05

−

µC

6. Negative signs for P−Channel device omitted for clarity.

7. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

8. Switching characteristics are independent of operating junction temperature.

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