MMDF2C01HD datasheet(2/16 Pages) ONSEMI

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MMDF2C01HD

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3.)

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

V(BR)DSS

(N)

(P)

−

Vdc

Zero Gate Voltage Drain Current

(VGS = 0 Vdc, VDS = 20 Vdc)

(VGS = 0 Vdc, VDS = 12 Vdc)

IDSS

(N)

(P)

−

1.0

µAdc

Gate−Body Leakage Current

(VGS = ± 8.0 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 4.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

(N)

(P)

0.7

0.8

1.0

1.1

Vdc

Drain−to−Source On−Resistance

(VGS = 4.5 Vdc, ID = 4.0 Adc)

(VGS = 4.5 Vdc, ID = 2.0 Adc)

RDS(on)

(N)

(P)

−

0.035

0.16

0.045

0.18

Ohm

Drain−to−Source On−Resistance

(VGS = 2.7 Vdc, ID = 2.0 Adc)

(VGS = 2.7 Vdc, ID = 1.0 Adc)

RDS(on)

(N)

(P)

−

0.043

0.2

0.055

0.22

Ohm

Forward Transconductance

(VDS = 2.5 Adc, ID = 2.0 Adc)

(VDS = 2.5 Adc, ID = 1.0 Adc)

gFS

(N)

(P)

3.0

6.0

4.75

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

(N)

(P)

−

425

530

595

740

Output Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

(N)

(P)

−

270

410

378

570

Transfer Capacitance

)

Crss

(N)

(P)

−

115

177

230

250

SWITCHING CHARACTERISTICS (Note 5.)

Turn−On Delay Time

(VDD = 6.0 Vdc, ID = 4.0 Adc,

td(on)

(N)

(P)

−

Rise Time

(VDD

6.0 Vdc, ID

4.0 Adc,

VGS = 2.7 Vdc,

RG = 2.3 Ω)

(N)

(P)

−

156

120

315

Turn−Off Delay Time

(VDD = 6.0 Vdc, ID = 2.0 Adc,

VGS = 2.7 Vdc,

td(off)

(N)

(P)

−

Fall Time

VGS = 2.7 Vdc,

RG = 6.0 Ω)

(N)

(P)

−

135

Turn−On Delay Time

(VDS = 6.0 Vdc, ID = 4.0 Adc,

td(on)

(N)

(P)

−

Rise Time

(VDS

6.0 Vdc, ID

4.0 Adc,

VGS = 4.5 Vdc,

RG = 2.3 Ω)

(N)

(P)

−

Turn−Off Delay Time

(VDS = 6.0 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

td(off)

(N)

(P)

−

135

Fall Time

VGS = 4.5 Vdc,

RG = 6.0 Ω)

(N)

(P)

−

110

3. Negative signs for P−Channel device omitted for clarity.

4. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperature.

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