UPD1002

DS00001760B-page 38

 2014 Microchip Technology Inc.

4.3

Power Consumption

This section details the power consumption of the device as measured during various modes of operation. Power dis-

sipation is determined by temperature, supply voltage, and external source/sink requirements.

Note:

Maximum values represent very short bursts of activity over a small amount of time. Typical values repre-

sent averaged current consumption over time.

4.4

DC Specifications

Note3:This specification applies to all inputs and tri-stated bi-directional pins. Internal pull-down and pull-up

resistors add +/- 50 µA per-pin (typical).

TABLE 4-1:

DEVICE POWER CONSUMPTION

Power State

VTR Supply Current

Typical

Max

Units

RESET

0.325

3.5

mA

PROVIDER MODE

Wait Insert State

1.2

16.2

mA

Legacy Device Connected

14.6

58.5

mA

PD Device Connected

28.0

69.0

mA

CONSUMER MODE

Sink Discovery State /

Legacy Device Connected

10.0

45.0

mA

PD Device Connected

28.0

69.0

mA

TABLE 4-2:

DC ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Min

Typ

Max

Units

IS Type Input Buffer

Low Input Level

High Input Level

Negative-Going Threshold

Positive-Going Threshold

Schmitt Trigger Hysteresis

Input Leakage

Input Capacitance

-0.3

2.5

1.25

1.40

188

-9.79

1.35

1.65

225

0.8

VDDIO+0.3

1.55

1.76

250

7.14

3

V

V

V

V

mV

nA

pF

Schmitt trigger

Schmitt trigger

Note 3

O8 Type Buffers

Low Output Level

High Output Level

VDDIO - 0.7

0.35

V

V

OD8 Type Buffer

Low Output Level

0.35

V