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STGD10HF60KD 数据表(PDF) 6 Page - STMicroelectronics |
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STGD10HF60KD 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 21 page ![]() Electrical characteristics STGD10HF60KD 6/21 DocID022874 Rev 3 Table 8. Collector-emitter diode Symbol Parameter Test conditions Min Typ. Max Unit VF Forward on-voltage IF = 3 A - 1.75 2.5 V IF = 3 A, TC= 150 °C - 1.45 V trr (1) 1. Value guaranteed by design Reverse recovery time IF = 3 A, VR = 400 V, di/dt = 100 A/µs -50 ns Qrr (1) Reverse recovery charge - 45 nC Irm (1) Reverse recovery current - 1.7 A trr (1) Reverse recovery time IF = 3 A, VR = 400 V, TC= 150 °C, di/dt = 100 A/µs - 100 ns Qrr (1) Reverse recovery charge - 150 nC Irm (1) Reverse recovery current - 3.1 A |
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