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STGD10HF60KD 数据表(PDF) 1 Page - STMicroelectronics |
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STGD10HF60KD 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 21 page ![]() This is information on a product in full production. September 2015 DocID022874 Rev 3 1/21 STGD10HF60KD Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode Datasheet - production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • Low on-voltage drop (VCE(sat)) • Low Cres / Cies ratio (no cross conduction susceptibility) • Switching losses include diode recovery energy • Short-circuit rated • Very soft Ultrafast recovery anti-parallel diode Applications • High frequency inverters • SMPS and PFC in both hard switch and resonant topologies • Motor drives • Injection systems Description This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies. DPAK 1 3 TAB Table 1. Device summary Order code Marking Package Packaging STGD10HF60KD GD10HF60KD DPAK Tape and reel www.st.com |
类似零件编号 - STGD10HF60KD |
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类似说明 - STGD10HF60KD |
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