STGD10HF60KD datasheet(5/21 Pages) STMICROELECTRONICS

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DocID022874 Rev 3

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STGD10HF60KD

Electrical characteristics

Table 6. Switching on/off (inductive load) (1)

Value guaranteed by design

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

VCC = 400 V, IC = 5 A

RG =10 Ω, VGE = 15 V

-9.5

Current rise time

4.4

(di/dt)on

Turn-on current slope

930

A/µs

td(on)

Turn-on delay time

VCC = 400 V, IC = 5 A

RG =10 Ω, VGE= 15 V

TC = 150 °C

-11

Current rise time

4.8

(di/dt)on

Turn-on current slope

904

A/µs

tr(Voff)

Off voltage rise time

VCC = 400 V, IC = 5 A,

RGE = 10 Ω, VGE = 15 V

-34

td(off)

Turn-off delay time

Current fall time

100

tr(Voff)

Off voltage rise time

VCC = 400 V, IC = 5 A,

RGE = 10 Ω, VGE = 15 V

TC= 150 °C

-83

td(off)

Turn-off delay time

Current fall time

224

Table 7. Switching energy (inductive load) (1)

Value guaranteed by design

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

Eon (2)

IGBT and diode are at the same temperature

Turn-on switching losses

VCC = 400 V, IC = 5 A

RG = 10 Ω, VGE = 15 V

-45

µJ

Eoff

(3)

Turn-off losses include also the tail of the collector current

Turn-off switching losses

105

µJ

Ets

Total switching losses

150

µJ

Eon (2)

Turn-on switching losses

VCC = 400 V, IC = 5 A

RG = 10 Ω, VGE= 15 V

TC = 150 °C

-84

µJ

Eoff

(3)

Turn-off switching losses

286

µJ

Ets

Total switching losses

370

µJ

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