STGD10HF60KD datasheet(4/21 Pages) STMICROELECTRONICS

部件名	STGD10HF60KD

功能描述	Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode

PDF	21 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

4 / 21 page

Electrical characteristics

STGD10HF60KD

4/21

DocID022874 Rev 3

Electrical characteristics

TCASE=25 °C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE= 0)

IC = 1 mA, TC = -40 °C

(1)

IC = 1 mA

IC = 1 mA, TC = 150 °C

Value guaranteed by design

600

610

650

700

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ±20 V

VGE = ±20 V, TC = 150 °C

±100

± 1

µA

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V, TC = 150 °C

150

µA

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 250 µA

4.5

6.5

VCE(sat)

Collector-emitter

saturation voltage

VGE = 15 V, IC = 5 A

1.4

2.5

Table 5. Dynamic (1)

Values guaranteed by design

Symbol

Parameter

Test conditions

Min. Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz, VGE= 0

-430

Coes

Output capacitance

Cres

Reverse transfer

capacitance

-10

Total gate charge

VCE = 400 V, IC = 5 A,

VGE = 15 V

-23

Qge

Gate-emitter charge

Qgc

Gate-collector charge

STGD10HF60KD 数据表(PDF) 4 Page - STMicroelectronics

STGD10HF60KD 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

数据表下载